N-channel Power MOSFET featuring 30V drain-source voltage and 80A continuous drain current. This through-hole component utilizes STripFET VI process technology and offers a low 4.7mOhm drain-source resistance at 10V. Packaged in a TO-220AB configuration, it supports a maximum power dissipation of 70000mW and operates across a wide temperature range of -55°C to 175°C.
PackageTO-220AB
MountingThrough Hole
Quick Jump:
Technical Specifications
Stmicroelectronics STP95N3LLH6 technical specifications.
General
Basic Package Type
Through Hole
Package Family Name
TO-220
Package/Case
TO-220AB
Package Description
Transistor Outline Package
Lead Shape
Through Hole
Pin Count
3
PCB
3
Tab
Tab
Package Length (mm)
10.4(Max)
Package Width (mm)
4.6(Max)
Package Height (mm)
9.15(Max)
Seated Plane Height (mm)
19.68(Max)
Pin Pitch (mm)
2.7(Max)
Package Weight (g)
1.9
Package Material
Plastic
Mounting
Through Hole
Jedec
TO-220AB
Configuration
Single
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
1
Process Technology
STripFET VI
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±20V
Maximum Continuous Drain Current
80A
Maximum Drain Source Resistance
4.7@10VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
2200@25VpF
Maximum Power Dissipation
70000mW
Min Operating Temperature
-55°C
Max Operating Temperature
175°C
Compliance
Cage Code
SCR76
EU RoHS
Yes with Exemption
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Stmicroelectronics STP95N3LLH6 Datasheet
Download the complete datasheet for Stmicroelectronics STP95N3LLH6 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.