N-channel SuperMESH™ Power MOSFET, 500V Drain to Source Breakdown Voltage, 7.2A Continuous Drain Current, and 850mΩ Max Drain-Source On Resistance. Features a TO-220FP package for through-hole mounting, 30W Power Dissipation, and operating temperatures from -55°C to 150°C. Includes fast switching characteristics with 17ns Turn-On Delay Time and 22ns Fall Time. RoHS compliant and lead-free.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power30W
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Technical Specifications
Stmicroelectronics STP9NK50ZFP technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
7.2A
Drain to Source Breakdown Voltage
500V
Drain to Source Resistance
850mR
Drain to Source Voltage (Vdss)
500V
Drain-source On Resistance-Max
850MR
Fall Time
22ns
Gate to Source Voltage (Vgs)
30V
Height
9.3mm
Input Capacitance
910pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
30W
Mount
Through Hole
Number of Elements
1
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
30W
Rds On Max
850mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Threshold Voltage
3.75V
Turn-Off Delay Time
45ns
Turn-On Delay Time
17ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP9NK50ZFP Datasheet
Download the complete datasheet for Stmicroelectronics STP9NK50ZFP to view detailed technical specifications.
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