N-channel SuperMESH™ Power MOSFET featuring 600V drain-source breakdown voltage and 7A continuous drain current. Offers 950mΩ typical drain-source on-resistance and 125W maximum power dissipation. This Zener-protected device is housed in a TO-220 package with through-hole mounting. Key electrical characteristics include a 3.75V threshold voltage and fast switching times with a 15ns fall time. Operates across a wide temperature range from -55°C to 150°C and is RoHS compliant.
PackageTO-220
Current Rating7A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP9NK60Z technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
7A
Current Rating
7A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
950mR
Drain to Source Voltage (Vdss)
600V
Fall Time
15ns
Gate to Source Voltage (Vgs)
30V
Height
9.15mm
Input Capacitance
1.11nF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
125W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
125W
Radiation Hardening
No
Rds On Max
950mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Threshold Voltage
3.75V
Turn-Off Delay Time
43ns
Turn-On Delay Time
19ns
DC Rated Voltage
600V
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP9NK60Z Datasheet
Download the complete datasheet for Stmicroelectronics STP9NK60Z to view detailed technical specifications.
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