N-channel SuperMESH™ Power MOSFET featuring 600V drain-source breakdown voltage and 7A continuous drain current. This through-hole component offers a low 0.85 Ohm typical drain-source resistance and 30W power dissipation. Designed with Zener protection, it operates within a -55°C to 150°C temperature range and is housed in a TO-220FP package. Key switching characteristics include a 15ns fall time, 19ns turn-on delay, and 43ns turn-off delay.
PackageTO-220-3
MountingThrough Hole
PolarityN-CHANNEL
Power30W
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Technical Specifications
Stmicroelectronics STP9NK60ZFP technical specifications.
General
Package/Case
TO-220-3
Continuous Drain Current (ID)
7A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
950mR
Drain to Source Voltage (Vdss)
600V
Fall Time
15ns
Gate to Source Voltage (Vgs)
30V
Height
16.4mm
Input Capacitance
1.11nF
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
30W
Mount
Through Hole
Package Quantity
50
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
30W
Radiation Hardening
No
Rds On Max
950mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH™
Threshold Voltage
3.75V
Turn-Off Delay Time
43ns
Turn-On Delay Time
19ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP9NK60ZFP Datasheet
Download the complete datasheet for Stmicroelectronics STP9NK60ZFP to view detailed technical specifications.
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