
N-CHANNEL POWER MOSFET featuring 800V drain-source breakdown voltage and 7.5A continuous drain current. This through-hole component offers a maximum drain-source on-resistance of 1.2 ohms. Operating across a temperature range of -55°C to 150°C, it boasts 150W power dissipation. The TO-220AB package is RoHS compliant and lead-free.
Stmicroelectronics STP9NK80Z technical specifications.
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