N-CHANNEL POWER MOSFET featuring 800V drain-source breakdown voltage and 7.5A continuous drain current. This through-hole component offers a maximum drain-source on-resistance of 1.2 ohms. Operating across a temperature range of -55°C to 150°C, it boasts 150W power dissipation. The TO-220AB package is RoHS compliant and lead-free.
PackageTO-220AB
Current Rating7.5A
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STP9NK80Z technical specifications.
General
| Package/Case | TO-220AB |
| Continuous Drain Current (ID) | 7.5A |
| Current Rating | 7.5A |
| Drain to Source Breakdown Voltage | 800V |
| Drain to Source Resistance | 900mR |
| Drain to Source Voltage (Vdss) | 800V |
| Drain-source On Resistance-Max | 1.2R |
| Fall Time | 18ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 1.9nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 150W |
| Mount | Through Hole |
| Package Quantity | 1000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 150W |
| Rds On Max | 1.2R |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Turn-Off Delay Time | 58ns |
| DC Rated Voltage | 800V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP9NK80Z Datasheet
Download the complete datasheet for Stmicroelectronics STP9NK80Z to view detailed technical specifications.
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