N-channel Power MOSFET featuring 600V drain-source voltage and 6.5A continuous drain current. This through-hole component offers a maximum on-resistance of 700mΩ and a threshold voltage of 3V. Operating across a wide temperature range from -55°C to 150°C, it boasts a maximum power dissipation of 70W. The TO-220 package houses a single element with typical turn-on delay of 28ns and fall time of 26.7ns.
PackageTO-220
MountingThrough Hole
Power70W
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Technical Specifications
Stmicroelectronics STP9NM60N technical specifications.
General
Package/Case
TO-220
Continuous Drain Current (ID)
6.5A
Drain to Source Voltage (Vdss)
600V
Drain-source On Resistance-Max
700mR
Fall Time
26.7ns
Gate to Source Voltage (Vgs)
25V
Height
15.75mm
Input Capacitance
452pF
Lead Free
Lead Free
Length
10.4mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
70W
Mount
Through Hole
Number of Elements
1
Package Quantity
50
Packaging
Rail/Tube
Power Dissipation
70W
Rds On Max
745mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™
Threshold Voltage
3V
Turn-Off Delay Time
52.5ns
Turn-On Delay Time
28ns
Width
4.6mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STP9NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STP9NM60N to view detailed technical specifications.
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