N-channel Power MOSFET featuring 600V drain-source voltage and 6.5A continuous drain current. This through-hole component offers a maximum on-resistance of 700mΩ and a threshold voltage of 3V. Operating across a wide temperature range from -55°C to 150°C, it boasts a maximum power dissipation of 70W. The TO-220 package houses a single element with typical turn-on delay of 28ns and fall time of 26.7ns.
PackageTO-220
MountingThrough Hole
Power70W
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Technical Specifications
Stmicroelectronics STP9NM60N technical specifications.
General
| Package/Case | TO-220 |
| Continuous Drain Current (ID) | 6.5A |
| Drain to Source Voltage (Vdss) | 600V |
| Drain-source On Resistance-Max | 700mR |
| Fall Time | 26.7ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 15.75mm |
| Input Capacitance | 452pF |
| Lead Free | Lead Free |
| Length | 10.4mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Power Dissipation | 70W |
| Rds On Max | 745mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ |
| Threshold Voltage | 3V |
| Turn-Off Delay Time | 52.5ns |
| Turn-On Delay Time | 28ns |
| Width | 4.6mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STP9NM60N Datasheet
Download the complete datasheet for Stmicroelectronics STP9NM60N to view detailed technical specifications.
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