PNP Silicon Bipolar Junction Transistor (BJT) for small signal applications. Features a 300V Collector-Emitter Breakdown Voltage (VCEO) and a maximum collector current of 500mA. Operates with a minimum DC current gain (hFE) of 40 and a transition frequency of 50MHz. Packaged in a TO-92 through-hole mount configuration. Rated for a maximum power dissipation of 625mW and operates across a temperature range of -65°C to 150°C. Lead-free and RoHS compliant.
Frequency50MHz
PackageTO-92
Current Rating-500mA
MountingThrough Hole
Quick Jump:
Technical Specifications
Stmicroelectronics STPSA92 technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
300V
Collector Emitter Breakdown Voltage
300V
Collector Emitter Voltage (VCEO)
300V
Collector-emitter Voltage-Max
500mV
Current Rating
-500mA
Emitter Base Voltage (VEBO)
5V
Frequency
50MHz
Gain Bandwidth Product
50MHz
hFE Min
40
Lead Free
Lead Free
Max Collector Current
500mA
Max Frequency
50MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
625mW
Mount
Through Hole
Number of Elements
1
Package Quantity
2500
Packaging
Bulk
Polarity
PNP
Power Dissipation
625mW
Radiation Hardening
No
RoHS Compliant
Yes
Transition Frequency
50MHz
DC Rated Voltage
-300V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STPSA92 Datasheet
Download the complete datasheet for Stmicroelectronics STPSA92 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.