Stmicroelectronics
STPSC10TH13TI
2 x 650V tandem, 10 A High Surge Silicon Carbide Power Schottky Diode
PackageTO-220-3
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STPSC10TH13TI technical specifications.
General
| Average Rectified Current | 10A |
| Package/Case | TO-220-3 |
| Forward Current | 10A |
| Max Forward Surge Current (Ifsm) | 470A |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -40°C |
| Max Repetitive Reverse Voltage (Vrrm) | 650V |
| Max Reverse Current | 425uA |
| Max Reverse Voltage (DC) | 650V |
| Mount | Through Hole |
| Package Quantity | 50 |
| Packaging | Rail/Tube |
| Peak Non-Repetitive Surge Current | 90A |
| Radiation Hardening | No |
| Reach SVHC Compliant | No |
| Reverse Recovery Time | 0ns |
| RoHS Compliant | Yes |
| Weight | 0.211644oz |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STPSC10TH13TI Datasheet
Download the complete datasheet for Stmicroelectronics STPSC10TH13TI to view detailed technical specifications.
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