Stmicroelectronics
STQ1NE10L-AP
1000mA, 100V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-92, TO-92, 3 PIN
MountingThrough Hole
Quick Jump:
Technical Specifications
Stmicroelectronics STQ1NE10L-AP technical specifications.
General
| Continuous Drain Current (ID) | 1A |
| Drain to Source Voltage (Vdss) | 100V |
| Drain-source On Resistance-Max | 400mR |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 16V |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Mount | Through Hole |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| Turn-Off Delay Time | 20ns |
| Turn-On Delay Time | 11ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STQ1NE10L-AP Datasheet
Download the complete datasheet for Stmicroelectronics STQ1NE10L-AP to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.