Stmicroelectronics
STQ2HNK60ZR-AP
N-channel 600 V, 4.4 Ohm, 2 A Zener-protected SuperMESH(TM) Power MOSFET in TO-92 package
PackageTO-226-3
MountingThrough Hole
Quick Jump:
Technical Specifications
Stmicroelectronics STQ2HNK60ZR-AP technical specifications.
General
| Package/Case | TO-226-3 |
| Continuous Drain Current (ID) | 500mA |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 50ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 280pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Mount | Through Hole |
| Package Quantity | 2000 |
| Packaging | Cut Tape |
| Radiation Hardening | No |
| Rds On Max | 4.8R |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 10ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STQ2HNK60ZR-AP Datasheet
Download the complete datasheet for Stmicroelectronics STQ2HNK60ZR-AP to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.