Stmicroelectronics
STQ2LN60K3-AP
N-channel 600 V, 4 Ohm typ., 0.6 A, MDmesh K3 Power MOSFET in a TO-92 package
PackageTO-226-3
MountingThrough Hole
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Stmicroelectronics STQ2LN60K3-AP technical specifications.
General
| Package/Case | TO-226-3 |
| Continuous Drain Current (ID) | 600mA |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 4.5R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 235pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Through Hole |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 4.5R |
| RoHS Compliant | Yes |
| Series | SuperMESH3™ |
| Turn-Off Delay Time | 23.5ns |
| Turn-On Delay Time | 10ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STQ2LN60K3-AP Datasheet
Download the complete datasheet for Stmicroelectronics STQ2LN60K3-AP to view detailed technical specifications.
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