The STQ2NK60ZR-AP is a SuperMESH N-Channel MOSFET with a maximum drain to source voltage of 600V and continuous drain current of 400mA. It features a maximum power dissipation of 3W and an on-resistance of 8 ohms. The device is packaged in a TO-92-3 cylindrical package, suitable for through-hole mounting, and is compliant with RoHS regulations. Operating temperature range is from -55°C to 150°C.
PackageTO-92-3
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STQ2NK60ZR-AP technical specifications.
General
| Package/Case | TO-92-3 |
| Continuous Drain Current (ID) | 400mA |
| Drain to Source Voltage (Vdss) | 600V |
| Input Capacitance | 170pF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 3W |
| Mount | Through Hole |
| Packaging | Tape and Reel |
| Rds On Max | 8R |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STQ2NK60ZR-AP Datasheet
Download the complete datasheet for Stmicroelectronics STQ2NK60ZR-AP to view detailed technical specifications.
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