Dual NPN/PNP bipolar junction transistor (BJT) power transistor in SOIC package. Features a 3A continuous collector current rating and 30V collector-emitter breakdown voltage. Offers a maximum power dissipation of 2W and operates across a temperature range of -65°C to 150°C. Includes a minimum hFE of 100 and a collector-emitter saturation voltage of 1V. Surface mountable with tape and reel packaging.
PackageSOIC
Current Rating3A
MountingSurface Mount
PolarityNPN, PNP
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Technical Specifications
Stmicroelectronics STS01DTP06 technical specifications.
General
| Package/Case | SOIC |
| Collector Base Voltage (VCBO) | 60V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | 1V |
| Collector Emitter Voltage (VCEO) | 30V |
| Collector-emitter Voltage-Max | 700mV |
| Current Rating | 3A |
| Emitter Base Voltage (VEBO) | 5V |
| Height | 1.25mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | NPN, PNP |
| Power Dissipation | 2W |
| Reach SVHC Compliant | No |
| RoHS Compliant | No |
| Saturation Current | 2A |
| Termination | SMD/SMT |
| DC Rated Voltage | 60V |
| Width | 4mm |
Compliance
| RoHS | Not Compliant |
Datasheet
Stmicroelectronics STS01DTP06 Datasheet
Download the complete datasheet for Stmicroelectronics STS01DTP06 to view detailed technical specifications.
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