N-channel power MOSFET featuring 30V drain-source breakdown voltage and 12A continuous drain current. Offers low on-state resistance of 9mR (typical) at 11mR (max) and a maximum power dissipation of 2.5W. Designed for surface mounting in an SOIC package with a fall time of 35ns and turn-on delay time of 35ns. Operates within a temperature range of -55°C to 150°C and is RoHS compliant.
PackageSOIC
Current Rating12A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STS12NF30L technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
12A
Current Rating
12A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
9mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
9mR
Dual Supply Voltage
30V
Fall Time
35ns
Gate to Source Voltage (Vgs)
20V
Height
1.25mm
Input Capacitance
2.4nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Number of Elements
1
On-State Resistance
11mR
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
9mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Row Spacing
6.3mm
Series
STripFET™
Threshold Voltage
1V
Turn-Off Delay Time
80ns
Turn-On Delay Time
35ns
DC Rated Voltage
30V
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STS12NF30L Datasheet
Download the complete datasheet for Stmicroelectronics STS12NF30L to view detailed technical specifications.
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