N-channel power MOSFET featuring 30V drain-source breakdown voltage and 13A continuous drain current. Offers a low 6.6mΩ maximum drain-source on-resistance. Designed for surface mount applications in an SO package, this component boasts fast switching characteristics with a 4.5ns fall time. Operating temperature range spans from -55°C to 150°C, with a maximum power dissipation of 2.7W.
Stmicroelectronics STS13N3LLH5 technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 13A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 6.6mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 6.6MR |
| Fall Time | 4.5ns |
| Gate to Source Voltage (Vgs) | 22V |
| Input Capacitance | 1.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.7W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.7W |
| Radiation Hardening | No |
| Rds On Max | 6.6mR |
| RoHS Compliant | Yes |
| Series | STripFET™ V |
| Turn-Off Delay Time | 22.7ns |
| Turn-On Delay Time | 9.3ns |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STS13N3LLH5 to view detailed technical specifications.
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