
N-channel power MOSFET featuring 30V drain-source breakdown voltage and 14A continuous drain current. Offers a low 6mΩ maximum drain-source on-resistance. Designed for surface mounting in an SOIC package, this component boasts a 1.5nF input capacitance and fast switching characteristics with a 4.5ns fall time. Operating temperature range spans from -55°C to 150°C with a maximum power dissipation of 2.7W. RoHS compliant and supplied on tape and reel.
Stmicroelectronics STS14N3LLH5 technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 14A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 6mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 6mR |
| Fall Time | 4.5ns |
| Gate to Source Voltage (Vgs) | 22V |
| Input Capacitance | 1.5nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.7W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.7W |
| Rds On Max | 6mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | STripFET™ V |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 22.7ns |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STS14N3LLH5 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
