N-channel power MOSFET featuring 30V drain-source breakdown voltage and 17A continuous drain current. Offers low on-resistance of 5.7mΩ at 5.7mR. Designed for surface mounting in an SOIC package, this component boasts a maximum power dissipation of 2.7W and operates within a temperature range of -55°C to 150°C. RoHS compliant with typical fall time of 20ns and turn-off delay of 38ns.
Stmicroelectronics STS17NH3LL technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 17A |
| Current Rating | 17A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 5.7mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 20ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 1.81nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.7W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.7W |
| Rds On Max | 5.7mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 38ns |
| DC Rated Voltage | 30V |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STS17NH3LL to view detailed technical specifications.
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