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Technical Specifications
Stmicroelectronics STS19N3LLH6 technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 19A |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 12ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 1.69nF |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.7W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Radiation Hardening | No |
| Rds On Max | 5.6mR |
| RoHS Compliant | Yes |
| Series | DeepGATE™, STripFET™ VI |
| Turn-Off Delay Time | 37ns |
| Turn-On Delay Time | 9.5ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STS19N3LLH6 Datasheet
Download the complete datasheet for Stmicroelectronics STS19N3LLH6 to view detailed technical specifications.
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