N-channel MOSFET, surface mount, SOP-8 package. Features 600V drain-to-source breakdown voltage and 300mA continuous drain current. Offers 8.5 Ohm Rds On, 156pF input capacitance, 6.5ns turn-on delay, and 25ns fall time. Maximum power dissipation is 2W, with operating temperatures from -65°C to 150°C. RoHS compliant.
PackageSO
Current Rating300mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STS1HNK60 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
300mA
Current Rating
300mA
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
8.5R
Drain to Source Voltage (Vdss)
600V
Fall Time
25ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
156pF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
2W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2W
Radiation Hardening
No
Rds On Max
8.5R
RoHS Compliant
Yes
Series
SuperMESH™
Turn-On Delay Time
6.5ns
DC Rated Voltage
600V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STS1HNK60 Datasheet
Download the complete datasheet for Stmicroelectronics STS1HNK60 to view detailed technical specifications.
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