N-channel SuperMESH™ Power MOSFET featuring 600V drain-source breakdown voltage and 250mA continuous drain current. Surface mountable in an SO-8 package, this device offers a low 15 Ohm typical drain-source on-resistance. Key switching characteristics include a 5.5ns turn-on delay and 28ns fall time, with a maximum power dissipation of 2W. Operating across a wide temperature range of -55°C to 150°C, this lead-free and RoHS compliant component is ideal for power switching applications.
PackageSO
Current Rating250mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STS1NK60Z technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 250mA |
| Current Rating | 250mA |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 15R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 94pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 15R |
| RoHS Compliant | Yes |
| Series | SuperMESH™ |
| Turn-Off Delay Time | 13ns |
| Turn-On Delay Time | 5.5ns |
| DC Rated Voltage | 600V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STS1NK60Z Datasheet
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