N-channel SuperMESH™ Power MOSFET featuring 600V drain-source breakdown voltage and 250mA continuous drain current. Surface mountable in an SO-8 package, this device offers a low 15 Ohm typical drain-source on-resistance. Key switching characteristics include a 5.5ns turn-on delay and 28ns fall time, with a maximum power dissipation of 2W. Operating across a wide temperature range of -55°C to 150°C, this lead-free and RoHS compliant component is ideal for power switching applications.
PackageSO
Current Rating250mA
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STS1NK60Z technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
250mA
Current Rating
250mA
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
15R
Drain to Source Voltage (Vdss)
600V
Fall Time
28ns
Gate to Source Voltage (Vgs)
30V
Input Capacitance
94pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2W
Radiation Hardening
No
Rds On Max
15R
RoHS Compliant
Yes
Series
SuperMESH™
Turn-Off Delay Time
13ns
Turn-On Delay Time
5.5ns
DC Rated Voltage
600V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STS1NK60Z Datasheet
Download the complete datasheet for Stmicroelectronics STS1NK60Z to view detailed technical specifications.
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