N-Channel Power MOSFET, 30V Drain-Source Breakdown Voltage, 3A Continuous Drain Current, and 90mΩ Drain-Source Resistance. Features STripFET™ II technology in an SOIC package for surface mounting. Offers a 1.6W power dissipation, 1.7V threshold voltage, and fast switching times with an 8ns fall time and 19ns turn-on delay. Compliant with RoHS standards.
PackageSOIC
Current Rating3A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STS2DNF30L technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
3A
Current Rating
3A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
90mR
Drain to Source Voltage (Vdss)
30V
Fall Time
8ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
18V
Input Capacitance
121pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.6W
Radiation Hardening
No
Rds On Max
110mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™
Threshold Voltage
1.7V
Turn-Off Delay Time
12ns
Turn-On Delay Time
19ns
DC Rated Voltage
30V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STS2DNF30L Datasheet
Download the complete datasheet for Stmicroelectronics STS2DNF30L to view detailed technical specifications.
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