N-Channel Power MOSFET, 30V Drain-Source Breakdown Voltage, 3A Continuous Drain Current, and 90mΩ Drain-Source Resistance. Features STripFET™ II technology in an SOIC package for surface mounting. Offers a 1.6W power dissipation, 1.7V threshold voltage, and fast switching times with an 8ns fall time and 19ns turn-on delay. Compliant with RoHS standards.
PackageSOIC
Current Rating3A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STS2DNF30L technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 3A |
| Current Rating | 3A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 90mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 8ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 18V |
| Input Capacitance | 121pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 1.6W |
| Radiation Hardening | No |
| Rds On Max | 110mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Threshold Voltage | 1.7V |
| Turn-Off Delay Time | 12ns |
| Turn-On Delay Time | 19ns |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STS2DNF30L Datasheet
Download the complete datasheet for Stmicroelectronics STS2DNF30L to view detailed technical specifications.
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