
P-channel MOSFET featuring 80V drain-source breakdown voltage and 250mΩ maximum drain-source on-resistance. This surface-mount component offers a continuous drain current of 2A and a current rating of -2.3A. Key performance characteristics include a 13ns fall time and 32ns turn-off delay time, with input capacitance at 739pF. Maximum power dissipation is 2.5W, operating between -55°C and 150°C.
Stmicroelectronics STS2DPF80 technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 2A |
| Current Rating | -2.3A |
| Drain to Source Breakdown Voltage | -80V |
| Drain to Source Resistance | 250mR |
| Drain to Source Voltage (Vdss) | 80V |
| Drain-source On Resistance-Max | 250mR |
| Fall Time | 13ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 739pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 250mR |
| RoHS Compliant | No |
| Series | STripFET™ |
| Turn-Off Delay Time | 32ns |
| DC Rated Voltage | -80V |
| RoHS | Not Compliant |
Download the complete datasheet for Stmicroelectronics STS2DPF80 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
