Dual-channel N-channel and P-channel MOSFET in a small signal configuration, featuring a 100V drain-to-source breakdown voltage and a 3A continuous drain current. This surface-mount device offers a low 145mΩ Rds On, 7.5ns fall time, and 33ns turn-off delay time. Operating across a wide temperature range from -55°C to 150°C, it supports up to 2W of power dissipation and has an input capacitance of 460pF. Packaged in SO format on tape and reel, this RoHS compliant component is lead-free.
PackageSO
Current Rating3A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Stmicroelectronics STS3C2F100 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
3A
Current Rating
3A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
145mR
Drain to Source Voltage (Vdss)
100V
Fall Time
7.5ns
FET Type
N and P-Channel
Gate to Source Voltage (Vgs)
20V
Input Capacitance
460pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Package Quantity
2500
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2W
Radiation Hardening
No
Rds On Max
145mR
RoHS Compliant
Yes
Series
STripFET™
Turn-Off Delay Time
33ns
DC Rated Voltage
100V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STS3C2F100 Datasheet
Download the complete datasheet for Stmicroelectronics STS3C2F100 to view detailed technical specifications.
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