STMICROELECTRONICS

STS3P6F6

Datasheet

Stmicroelectronics

STS3P6F6

Name: STS3P6F6 Stmicroelectronics
Brand: Stmicroelectronics
SKU: STS3P6F6

P-CH JFET 60V 3A 160mR SO-8

P-channel Power MOSFET, Surface Mount, SO-8 package. Features 60V drain-source breakdown voltage, 3A continuous drain current, and low 130mΩ typical drain-source on-resistance. Operates from -55°C to 150°C with a maximum power dissipation of 2.7W. Includes fast switching characteristics with fall time of 3.7ns and turn-on delay of 6.4ns. RoHS compliant and lead-free.

PackageSO

MountingSurface Mount

PolarityP-CHANNEL

Power2.7W

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Technical Specifications

Stmicroelectronics STS3P6F6 technical specifications.

General

Package/Case	SO
Continuous Drain Current (ID)	3A
Drain to Source Breakdown Voltage	-60V
Drain to Source Resistance	130mR
Drain to Source Voltage (Vdss)	60V
Drain-source On Resistance-Max	160mR
Fall Time	3.7ns
Gate to Source Voltage (Vgs)	20V
Height	1.5mm
Input Capacitance	340pF
Lead Free	Lead Free
Length	5mm
Max Operating Temperature	150°C
Min Operating Temperature	-55°C
Max Power Dissipation	2.7W
Mount	Surface Mount
Number of Elements	1
Package Quantity	2500
Packaging	Tape and Reel
Polarity	P-CHANNEL
Power Dissipation	2.7W
Radiation Hardening	No
Rds On Max	160mR
RoHS Compliant	Yes
Series	DeepGATE™, STripFET™ VI
Turn-Off Delay Time	14ns
Turn-On Delay Time	6.4ns
Width	4mm