P-channel Power MOSFET, Surface Mount, SO-8 package. Features 60V drain-source breakdown voltage, 3A continuous drain current, and low 130mΩ typical drain-source on-resistance. Operates from -55°C to 150°C with a maximum power dissipation of 2.7W. Includes fast switching characteristics with fall time of 3.7ns and turn-on delay of 6.4ns. RoHS compliant and lead-free.
PackageSO
MountingSurface Mount
PolarityP-CHANNEL
Power2.7W
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Technical Specifications
Stmicroelectronics STS3P6F6 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
3A
Drain to Source Breakdown Voltage
-60V
Drain to Source Resistance
130mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
160mR
Fall Time
3.7ns
Gate to Source Voltage (Vgs)
20V
Height
1.5mm
Input Capacitance
340pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.7W
Mount
Surface Mount
Number of Elements
1
Package Quantity
2500
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2.7W
Radiation Hardening
No
Rds On Max
160mR
RoHS Compliant
Yes
Series
DeepGATE™, STripFET™ VI
Turn-Off Delay Time
14ns
Turn-On Delay Time
6.4ns
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STS3P6F6 Datasheet
Download the complete datasheet for Stmicroelectronics STS3P6F6 to view detailed technical specifications.
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