Dual N-channel and P-channel power MOSFET, surface mountable in an SO package. Features 60V drain-to-source breakdown voltage and a continuous drain current of 3A, with a 4A current rating. Offers low on-resistance of 55mΩ at a 10V gate-source voltage. Operates within a temperature range of -55°C to 150°C, with a maximum power dissipation of 2W. RoHS compliant and lead-free.
PackageSO
Current Rating4A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Stmicroelectronics STS4C3F60L technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 3A |
| Current Rating | 4A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 55mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 14.5ns |
| FET Type | N and P-Channel |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 1.03nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 55mR |
| RoHS Compliant | Yes |
| Series | OptiMOS™ |
| Turn-Off Delay Time | 39ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STS4C3F60L Datasheet
Download the complete datasheet for Stmicroelectronics STS4C3F60L to view detailed technical specifications.
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