Dual P-Channel MOSFET, 20V Drain-Source Breakdown Voltage, 80mΩ Max Drain-Source On-Resistance, 4A Continuous Drain Current. Features 1.6W Max Power Dissipation, 1.35nF Input Capacitance, and 1.6V Threshold Voltage. Surface mountable in an SOIC package, this RoHS compliant component offers fast switching with 25ns Turn-On Delay and 35ns Fall Time.
PackageSOIC
Current Rating-4A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STS4DPF20L technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4A |
| Current Rating | -4A |
| Drain to Source Breakdown Voltage | 20V |
| Drain to Source Resistance | 80mR |
| Drain to Source Voltage (Vdss) | 20V |
| Drain-source On Resistance-Max | 80mR |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 1.25mm |
| Input Capacitance | 1.35nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 80mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Threshold Voltage | 1.6V |
| Turn-Off Delay Time | 125ns |
| Turn-On Delay Time | 25ns |
| DC Rated Voltage | -20V |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STS4DPF20L Datasheet
Download the complete datasheet for Stmicroelectronics STS4DPF20L to view detailed technical specifications.
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