P-CHANNEL MOSFET, SOIC package, featuring 30V drain-source breakdown voltage and 80mΩ drain-source on-resistance. Delivers 4A continuous drain current with a 2W power dissipation. Operates from -55°C to 150°C, with 25ns turn-on and 125ns turn-off delay times. Surface mountable with a 1.35nF input capacitance.
PackageSOIC
Current Rating-4A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Stmicroelectronics STS4DPF30L technical specifications.
General
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 4A |
| Current Rating | -4A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 80mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 80mR |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 1.25mm |
| Input Capacitance | 1.35nF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 80mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Threshold Voltage | 1V |
| Turn-Off Delay Time | 125ns |
| Turn-On Delay Time | 25ns |
| DC Rated Voltage | -30V |
| Width | 4mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STS4DPF30L Datasheet
Download the complete datasheet for Stmicroelectronics STS4DPF30L to view detailed technical specifications.
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