
P-channel MOSFET, SO-8 package, designed for surface mounting. Features a continuous drain current of 5A and a drain-to-source breakdown voltage of -30V. Offers a low Rds On of 55mR at a gate-to-source voltage of 16V. Includes fast switching characteristics with a turn-on delay time of 25ns and a fall time of 35ns. Maximum power dissipation is 2.5W, operating across a temperature range of -55°C to 150°C. RoHS compliant and lead-containing.
Stmicroelectronics STS4DPFS30L technical specifications.
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