P-channel MOSFET, SO-8 package, designed for surface mounting. Features a continuous drain current of 5A and a drain-to-source breakdown voltage of -30V. Offers a low Rds On of 55mR at a gate-to-source voltage of 16V. Includes fast switching characteristics with a turn-on delay time of 25ns and a fall time of 35ns. Maximum power dissipation is 2.5W, operating across a temperature range of -55°C to 150°C. RoHS compliant and lead-containing.
PackageSO
Current Rating-5A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Stmicroelectronics STS4DPFS30L technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 5A |
| Current Rating | -5A |
| Drain to Source Breakdown Voltage | -30V |
| Drain to Source Resistance | 45mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 35ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 1.35nF |
| Lead Free | Contains Lead |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | P-CHANNEL |
| Power Dissipation | 2.5W |
| Rds On Max | 55mR |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Turn-Off Delay Time | 125ns |
| Turn-On Delay Time | 25ns |
| DC Rated Voltage | -30V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STS4DPFS30L Datasheet
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