P-channel MOSFET, SO-8 package, designed for surface mounting. Features a continuous drain current of 5A and a drain-to-source breakdown voltage of -30V. Offers a low Rds On of 55mR at a gate-to-source voltage of 16V. Includes fast switching characteristics with a turn-on delay time of 25ns and a fall time of 35ns. Maximum power dissipation is 2.5W, operating across a temperature range of -55°C to 150°C. RoHS compliant and lead-containing.
PackageSO
Current Rating-5A
MountingSurface Mount
PolarityP-CHANNEL
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Technical Specifications
Stmicroelectronics STS4DPFS30L technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
5A
Current Rating
-5A
Drain to Source Breakdown Voltage
-30V
Drain to Source Resistance
45mR
Drain to Source Voltage (Vdss)
30V
Fall Time
35ns
Gate to Source Voltage (Vgs)
16V
Input Capacitance
1.35nF
Lead Free
Contains Lead
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
P-CHANNEL
Power Dissipation
2.5W
Rds On Max
55mR
RoHS Compliant
Yes
Series
STripFET™
Turn-Off Delay Time
125ns
Turn-On Delay Time
25ns
DC Rated Voltage
-30V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STS4DPFS30L Datasheet
Download the complete datasheet for Stmicroelectronics STS4DPFS30L to view detailed technical specifications.
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