
N-CHANNEL POWER MOSFET, SO-8 package, featuring 100V drain-to-source breakdown voltage and 4A continuous drain current. Offers a low 70mΩ Rds On resistance. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Surface mountable with tape and reel packaging.
Stmicroelectronics STS4NF100 technical specifications.
| Package/Case | SO |
| Continuous Drain Current (ID) | 4A |
| Current Rating | 4A |
| Drain to Source Breakdown Voltage | 100V |
| Drain to Source Resistance | 65mR |
| Drain to Source Voltage (Vdss) | 100V |
| Fall Time | 17ns |
| Gate to Source Voltage (Vgs) | 20V |
| Height | 1.25mm |
| Input Capacitance | 870pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2.5W |
| Mount | Surface Mount |
| Number of Elements | 1 |
| Package Quantity | 1 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2.5W |
| Radiation Hardening | No |
| Rds On Max | 70mR |
| Reach SVHC Compliant | Yes |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Turn-Off Delay Time | 49ns |
| Turn-On Delay Time | 58ns |
| DC Rated Voltage | 100V |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STS4NF100 to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
