N-CHANNEL POWER MOSFET, SO-8 package, featuring 100V drain-to-source breakdown voltage and 4A continuous drain current. Offers a low 70mΩ Rds On resistance. Operates within a temperature range of -55°C to 150°C with a maximum power dissipation of 2.5W. Surface mountable with tape and reel packaging.
PackageSO
Current Rating4A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STS4NF100 technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
4A
Current Rating
4A
Drain to Source Breakdown Voltage
100V
Drain to Source Resistance
65mR
Drain to Source Voltage (Vdss)
100V
Fall Time
17ns
Gate to Source Voltage (Vgs)
20V
Height
1.25mm
Input Capacitance
870pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
70mR
Reach SVHC Compliant
Yes
RoHS Compliant
Yes
Series
STripFET™
Turn-Off Delay Time
49ns
Turn-On Delay Time
58ns
DC Rated Voltage
100V
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STS4NF100 Datasheet
Download the complete datasheet for Stmicroelectronics STS4NF100 to view detailed technical specifications.
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