Dual N-channel power MOSFET featuring 20V drain-source breakdown voltage and 5A continuous drain current. Offers a maximum drain-source on-resistance of 40mΩ at 10V Vgs. Surface-mount SOIC package with a maximum power dissipation of 2W. Includes fast switching characteristics with a 7ns turn-on delay and 10ns fall time.
PackageSOIC
Current Rating5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STS5DNF20V technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
5A
Current Rating
5A
Drain to Source Breakdown Voltage
20V
Drain to Source Resistance
30mR
Drain to Source Voltage (Vdss)
20V
Drain-source On Resistance-Max
40mR
Fall Time
10ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
12V
Height
1.65mm
Input Capacitance
460pF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Number of Elements
2
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2W
Radiation Hardening
No
Rds On Max
40mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™ II
Threshold Voltage
2.7V
Turn-Off Delay Time
27ns
Turn-On Delay Time
7ns
DC Rated Voltage
20V
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STS5DNF20V Datasheet
Download the complete datasheet for Stmicroelectronics STS5DNF20V to view detailed technical specifications.
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