N-channel power MOSFET featuring 150V drain-source breakdown voltage and 5A continuous drain current. Offers a low 63mΩ maximum drain-source on-resistance. Designed for surface mount applications in an SOIC package, this component boasts fast switching speeds with a 13.5ns turn-on delay and 11.4ns fall time. Operating temperature range spans -55°C to 150°C with a maximum power dissipation of 2.5W.
PackageSOIC
MountingSurface Mount
PolarityN-CHANNEL
Power2.5W
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Technical Specifications
Stmicroelectronics STS5N15F4 technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
5A
Drain to Source Breakdown Voltage
150V
Drain to Source Voltage (Vdss)
150V
Drain-source On Resistance-Max
63mR
Fall Time
11.4ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
2.71nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
63mR
RoHS Compliant
Yes
Series
DeepGATE™, STripFET™
Turn-Off Delay Time
39.7ns
Turn-On Delay Time
13.5ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STS5N15F4 Datasheet
Download the complete datasheet for Stmicroelectronics STS5N15F4 to view detailed technical specifications.
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