N-Channel MOSFET featuring 60V drain-source breakdown voltage and 5A continuous drain current. This surface-mount device offers a low 45mΩ drain-source on-resistance and a maximum power dissipation of 2.5W. Operating across a temperature range of -55°C to 150°C, it boasts fast switching characteristics with a 13ns turn-on delay and 10ns fall time. The SOIC package is RoHS compliant and suitable for tape and reel packaging.
Stmicroelectronics STS5NF60L technical specifications.
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