N-Channel MOSFET featuring 60V drain-source breakdown voltage and 5A continuous drain current. This surface-mount device offers a low 45mΩ drain-source on-resistance and a maximum power dissipation of 2.5W. Operating across a temperature range of -55°C to 150°C, it boasts fast switching characteristics with a 13ns turn-on delay and 10ns fall time. The SOIC package is RoHS compliant and suitable for tape and reel packaging.
PackageSOIC
Current Rating5A
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Stmicroelectronics STS5NF60L technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
5A
Current Rating
5A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
55mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
45mR
Fall Time
10ns
Gate to Source Voltage (Vgs)
15V
Height
1.65mm
Input Capacitance
1.25nF
Lead Free
Lead Free
Length
5mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
55mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™
Threshold Voltage
1.7V
Turn-Off Delay Time
45ns
Turn-On Delay Time
13ns
DC Rated Voltage
60V
Width
4mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STS5NF60L Datasheet
Download the complete datasheet for Stmicroelectronics STS5NF60L to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
