N-channel MOSFET featuring 60V drain-source breakdown voltage and 7.5A continuous drain current. Offers low 17mΩ drain-source on-resistance at a nominal Vgs of 1V, with a maximum of 19.5mΩ. Designed for surface mounting in a SOIC package, this component boasts fast switching speeds with turn-on delay of 15ns and fall time of 20ns. Maximum power dissipation is 2.5W, operating across a temperature range of -55°C to 150°C, and is RoHS compliant.
PackageSOIC
Current Rating7.5A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STS7NF60L technical specifications.
General
Package/Case
SOIC
Continuous Drain Current (ID)
7.5A
Current Rating
7.5A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
17mR
Drain to Source Voltage (Vdss)
60V
Drain-source On Resistance-Max
19.5mR
Fall Time
20ns
Gate to Source Voltage (Vgs)
16V
Input Capacitance
1.7nF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2.5W
Mount
Surface Mount
Nominal Vgs
1V
Number of Elements
1
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2.5W
Radiation Hardening
No
Rds On Max
19.5mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
STripFET™
Threshold Voltage
1V
Turn-Off Delay Time
47ns
Turn-On Delay Time
15ns
DC Rated Voltage
60V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STS7NF60L Datasheet
Download the complete datasheet for Stmicroelectronics STS7NF60L to view detailed technical specifications.
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