N-channel Power MOSFET, dual dual drain configuration, featuring 30V drain-source voltage and 10A continuous drain current. This surface-mount component is housed in an 8-pin SO N (SOP) package with gull-wing leads, measuring 5mm x 4mm x 1.65mm. Key electrical characteristics include a maximum drain-source on-resistance of 19mΩ at 10V and a typical gate charge of 5.4nC at 4.5V. Operating temperature range spans from -55°C to 150°C.
PackageSO N
MountingSurface Mount
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Technical Specifications
Stmicroelectronics STS8DN3LLH5 technical specifications.
General
Basic Package Type
Lead-Frame SMT
Package Family Name
SOP
Package/Case
SO N
Package Description
Small Outline IC Narrow Body
Lead Shape
Gull-wing
Pin Count
8
PCB
8
Package Length (mm)
5(Max)
Package Width (mm)
4(Max)
Package Height (mm)
1.65(Max)
Seated Plane Height (mm)
1.75(Max)
Pin Pitch (mm)
1.27
Package Material
Plastic
Mounting
Surface Mount
Jedec
MS-012AA
Configuration
Dual Dual Drain
Category
Power MOSFET
Channel Mode
Enhancement
Channel Type
N
Number of Elements per Chip
2
Maximum Drain Source Voltage
30V
Maximum Gate Source Voltage
±22V
Maximum Continuous Drain Current
10A
Maximum Drain Source Resistance
19@10VmOhm
Typical Gate Charge @ Vgs
Typical Input Capacitance @ Vds
724@25VpF
Maximum Power Dissipation
2700mW
Min Operating Temperature
-55°C
Max Operating Temperature
150°C
Typical Output Capacitance
132pF
Compliance
Cage Code
SCR76
EU RoHS
Yes
HTS Code
8541290095
Schedule B
8541290080
ECCN
EAR99
Automotive
No
AEC Qualified
No
PPAP
No
Radiation Hardening
No
RoHS Versions
2011/65/EU, 2015/863
Datasheet
Stmicroelectronics STS8DN3LLH5 Datasheet
Download the complete datasheet for Stmicroelectronics STS8DN3LLH5 to view detailed technical specifications.
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