Dual N-channel MOSFET, 30V Drain-Source Breakdown Voltage, featuring 8A continuous drain current and a low 0.017 Ohm typical drain-source on-resistance. This power MOSFET, part of the STripFET™ II series, is housed in a surface-mount SO-8 package. It offers fast switching characteristics with turn-on delay time of 18ns and fall time of 11ns. Designed for efficiency, it supports a maximum power dissipation of 2W and operates within a temperature range of -55°C to 150°C.
PackageSO
Current Rating8A
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Stmicroelectronics STS8DNF3LL technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 8A |
| Current Rating | 8A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 20mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 20mR |
| Fall Time | 11ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 800pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 1.6W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 20mR |
| RoHS Compliant | Yes |
| Series | STripFET™ II |
| Turn-Off Delay Time | 21ns |
| Turn-On Delay Time | 18ns |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STS8DNF3LL Datasheet
Download the complete datasheet for Stmicroelectronics STS8DNF3LL to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
