Dual N-channel MOSFET, 30V Drain-Source Breakdown Voltage, featuring 8A continuous drain current and a low 0.017 Ohm typical drain-source on-resistance. This power MOSFET, part of the STripFET™ II series, is housed in a surface-mount SO-8 package. It offers fast switching characteristics with turn-on delay time of 18ns and fall time of 11ns. Designed for efficiency, it supports a maximum power dissipation of 2W and operates within a temperature range of -55°C to 150°C.
PackageSO
Current Rating8A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STS8DNF3LL technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
8A
Current Rating
8A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
20mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
20mR
Fall Time
11ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
16V
Input Capacitance
800pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2W
Radiation Hardening
No
Rds On Max
20mR
RoHS Compliant
Yes
Series
STripFET™ II
Turn-Off Delay Time
21ns
Turn-On Delay Time
18ns
DC Rated Voltage
30V
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STS8DNF3LL Datasheet
Download the complete datasheet for Stmicroelectronics STS8DNF3LL to view detailed technical specifications.
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