Dual N-channel MOSFET, SO-8 package, offering 30V drain-source breakdown voltage and 8A continuous drain current. Features a low 22mΩ maximum drain-source on-resistance. Operates with a gate-source voltage up to 16V, exhibiting an 8ns fall time and 23ns turn-off delay. Maximum power dissipation is 2W, with operating temperatures ranging from -55°C to 150°C.
PackageSO
Current Rating8A
MountingSurface Mount
PolarityN-CHANNEL
Quick Jump:
Technical Specifications
Stmicroelectronics STS8DNH3LL technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 8A |
| Current Rating | 8A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 22mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 22mR |
| Fall Time | 8ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 857pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Rds On Max | 22mR |
| RoHS Compliant | No |
| Series | STripFET™ III |
| Turn-Off Delay Time | 23ns |
| DC Rated Voltage | 30V |
Compliance
| RoHS | Not Compliant |
Datasheet
Stmicroelectronics STS8DNH3LL Datasheet
Download the complete datasheet for Stmicroelectronics STS8DNH3LL to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.