Dual N-channel MOSFET, SO-8 package, offering 30V drain-source breakdown voltage and 8A continuous drain current. Features a low 22mΩ maximum drain-source on-resistance. Operates with a gate-source voltage up to 16V, exhibiting an 8ns fall time and 23ns turn-off delay. Maximum power dissipation is 2W, with operating temperatures ranging from -55°C to 150°C.
PackageSO
Current Rating8A
MountingSurface Mount
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STS8DNH3LL technical specifications.
General
Package/Case
SO
Continuous Drain Current (ID)
8A
Current Rating
8A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
22mR
Drain to Source Voltage (Vdss)
30V
Drain-source On Resistance-Max
22mR
Fall Time
8ns
FET Type
2 N-Channel
Gate to Source Voltage (Vgs)
16V
Input Capacitance
857pF
Lead Free
Lead Free
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
2W
Mount
Surface Mount
Package Quantity
2500
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
2W
Rds On Max
22mR
RoHS Compliant
No
Series
STripFET™ III
Turn-Off Delay Time
23ns
DC Rated Voltage
30V
Compliance
RoHS
Not Compliant
Datasheet
Stmicroelectronics STS8DNH3LL Datasheet
Download the complete datasheet for Stmicroelectronics STS8DNH3LL to view detailed technical specifications.
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