Dual N-channel MOSFET, 30V drain-source breakdown voltage, 9A continuous drain current, and 22mΩ maximum drain-source on-resistance. Features include 8.5ns fall time and 18ns turn-off delay time, with 857pF input capacitance. This surface-mount component operates from -55°C to 150°C and has a maximum power dissipation of 2W. Packaged in SO format on tape and reel.
PackageSO
MountingSurface Mount
PolarityN-CHANNEL
Power2W
Quick Jump:
Technical Specifications
Stmicroelectronics STS9D8NH3LL technical specifications.
General
| Package/Case | SO |
| Continuous Drain Current (ID) | 9A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 22mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 22MR |
| Fall Time | 8.5ns |
| FET Type | 2 N-Channel |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 857pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 2W |
| Mount | Surface Mount |
| Number of Elements | 2 |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 2W |
| Radiation Hardening | No |
| Rds On Max | 22mR |
| RoHS Compliant | No |
| Series | STripFET™ |
| Turn-Off Delay Time | 18ns |
Compliance
| RoHS | Not CompliantNo |
Datasheet
Stmicroelectronics STS9D8NH3LL Datasheet
Download the complete datasheet for Stmicroelectronics STS9D8NH3LL to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
Product Images
