NPN Bipolar Junction Transistor (BJT) with a 5A maximum collector current and 60V collector-emitter breakdown voltage. Features a 150V collector-base voltage and a 450mV collector-emitter saturation voltage. Operates up to 130MHz with a minimum hFE of 150. Housed in a RoHS compliant TO-92 package for through-hole mounting, with a maximum power dissipation of 1.1W.
Frequency130MHz
PackageTO-92
Current Rating5A
MountingThrough Hole
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Technical Specifications
Stmicroelectronics STSA851 technical specifications.
General
Package/Case
TO-92
Collector Base Voltage (VCBO)
150V
Collector Emitter Breakdown Voltage
60V
Collector Emitter Saturation Voltage
450mV
Collector Emitter Voltage (VCEO)
60V
Collector-emitter Voltage-Max
450mV
Current Rating
5A
Emitter Base Voltage (VEBO)
7V
Frequency
130MHz
Gain Bandwidth Product
130MHz
Height
4.95mm
hFE Min
150
Lead Free
Lead Free
Length
4.95mm
Max Breakdown Voltage
60V
Max Collector Current
5A
Max Frequency
130MHz
Max Operating Temperature
150°C
Min Operating Temperature
-65°C
Max Power Dissipation
1.1W
Mount
Through Hole
Number of Elements
1
Package Quantity
2500
Packaging
Bulk
Polarity
NPN
Power Dissipation
1.1W
Reach SVHC Compliant
No
RoHS Compliant
Yes
Transition Frequency
130MHz
DC Rated Voltage
150V
Width
3.94mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STSA851 Datasheet
Download the complete datasheet for Stmicroelectronics STSA851 to view detailed technical specifications.
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