N-channel power MOSFET featuring 30V drain-source breakdown voltage and 25A continuous drain current. Offers a low 10.5mΩ maximum drain-source on-resistance. Designed for surface mounting in a SOIC package, this component boasts a 70W maximum power dissipation and operates across a wide temperature range of -55°C to 150°C. Includes fast switching characteristics with a 28ns fall time and 27ns turn-off delay.
Stmicroelectronics STSJ25NF3LL technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 25A |
| Current Rating | 25A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 10.5mR |
| Drain to Source Voltage (Vdss) | 30V |
| Drain-source On Resistance-Max | 10.5mR |
| Fall Time | 28ns |
| Gate to Source Voltage (Vgs) | 16V |
| Input Capacitance | 1.65nF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 70W |
| Mount | Surface Mount |
| Package Quantity | 2500 |
| Packaging | Tape and Reel |
| Polarity | N-CHANNEL |
| Power Dissipation | 70W |
| Rds On Max | 10.5mR |
| RoHS Compliant | Yes |
| Series | STripFET™ II |
| Turn-Off Delay Time | 27ns |
| DC Rated Voltage | 30V |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STSJ25NF3LL to view detailed technical specifications.
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