
N-CHANNEL Power MOSFET, SOIC package, featuring 30V Drain to Source Breakdown Voltage and 50A Continuous Drain Current. Offers low 8mR Drain to Source Resistance and 10.5mR Rds On Max. Designed for surface mount applications with a maximum power dissipation of 50W and operating temperature range of -55°C to 150°C. Includes fast switching characteristics with 15ns Turn-On Delay Time and 8.5ns Fall Time.
Stmicroelectronics STSJ50NH3LL technical specifications.
| Package/Case | SOIC |
| Continuous Drain Current (ID) | 50A |
| Current Rating | 50A |
| Drain to Source Breakdown Voltage | 30V |
| Drain to Source Resistance | 8mR |
| Drain to Source Voltage (Vdss) | 30V |
| Fall Time | 8.5ns |
| Gate to Source Voltage (Vgs) | 16V |
| Height | 1.65mm |
| Input Capacitance | 965pF |
| Lead Free | Lead Free |
| Length | 5mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 50W |
| Mount | Surface Mount |
| Package Quantity | 1 |
| Packaging | Cut Tape |
| Polarity | N-CHANNEL |
| Power Dissipation | 50W |
| Rds On Max | 10.5mR |
| RoHS Compliant | Yes |
| Series | STripFET™ |
| Turn-Off Delay Time | 18ns |
| Turn-On Delay Time | 15ns |
| DC Rated Voltage | 30V |
| Width | 4mm |
| RoHS | Compliant |
Download the complete datasheet for Stmicroelectronics STSJ50NH3LL to view detailed technical specifications.
This datasheet cannot be embedded due to technical restrictions.
