N-channel power MOSFET featuring STripFET™ VI DeepGATE™ technology. Offers 30V drain-source breakdown voltage (Vdss) and a continuous drain current (ID) of 6A. Low on-resistance of 25mΩ (Rds On Max) and 40mΩ (Drain to Source Resistance) ensures efficient power handling. Packaged in a compact SOT-23-6L surface-mount package with dimensions of 3.05mm length, 1.75mm width, and 1.3mm height. Features fast switching speeds with a turn-on delay time of 4.8ns and a fall time of 5.4ns. RoHS compliant and lead-free.
PackageSOT-23-6
MountingSurface Mount
PolarityN-CHANNEL
Power1.6W
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Technical Specifications
Stmicroelectronics STT6N3LLH6 technical specifications.
General
Package/Case
SOT-23-6
Continuous Drain Current (ID)
6A
Drain to Source Breakdown Voltage
30V
Drain to Source Resistance
40mR
Drain to Source Voltage (Vdss)
30V
Fall Time
5.4ns
Gate to Source Voltage (Vgs)
20V
Height
1.3mm
Input Capacitance
283pF
Lead Free
Lead Free
Length
3.05mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
1.6W
Mount
Surface Mount
Package Quantity
1
Packaging
Tape and Reel
Polarity
N-CHANNEL
Power Dissipation
1.6W
Radiation Hardening
No
Rds On Max
25mR
RoHS Compliant
Yes
Series
STripFET™ VI, DeepGATE™
Turn-Off Delay Time
9.4ns
Turn-On Delay Time
4.8ns
Width
1.75mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STT6N3LLH6 Datasheet
Download the complete datasheet for Stmicroelectronics STT6N3LLH6 to view detailed technical specifications.
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