PNP Bipolar Junction Transistor (BJT) for surface mount applications, featuring a SOT-23-6 package. Delivers a maximum collector current of 3A with a collector-emitter breakdown voltage of 30V. Offers a minimum DC current gain (hFE) of 100 and a low collector-emitter saturation voltage of -210mV. Operates within a temperature range of -65°C to 150°C, with a maximum power dissipation of 1.2W. This lead-free, RoHS compliant component is supplied on tape and reel.
PackageSOT-23-6
Current Rating-3A
MountingSurface Mount
PolarityPNP
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Technical Specifications
Stmicroelectronics STT818B technical specifications.
General
| Package/Case | SOT-23-6 |
| Collector Base Voltage (VCBO) | 30V |
| Collector Emitter Breakdown Voltage | 30V |
| Collector Emitter Saturation Voltage | -210mV |
| Collector-emitter Voltage-Max | 500mV |
| Current Rating | -3A |
| Emitter Base Voltage (VEBO) | -5V |
| Height | 1.3mm |
| hFE Min | 100 |
| Lead Free | Lead Free |
| Length | 3.05mm |
| Max Breakdown Voltage | 30V |
| Max Collector Current | 3A |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -65°C |
| Max Power Dissipation | 1.2W |
| Mount | Surface Mount |
| Package Quantity | 3000 |
| Packaging | Tape and Reel |
| Polarity | PNP |
| Radiation Hardening | No |
| RoHS Compliant | Yes |
| DC Rated Voltage | -30V |
| Width | 1.75mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STT818B Datasheet
Download the complete datasheet for Stmicroelectronics STT818B to view detailed technical specifications.
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