N-channel power MOSFET featuring 600V drain-source breakdown voltage and 7.5A continuous drain current. Offers 0.55 Ohm typical drain-source resistance at 560mR maximum. IPA K package with through-hole mounting, 85W max power dissipation, and operating temperatures from -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 8.8ns and fall time of 13.2ns.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STU10N60M2 technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
7.5A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
560mR
Drain to Source Voltage (Vdss)
600V
Fall Time
13.2ns
Gate to Source Voltage (Vgs)
25V
Height
6.2mm
Input Capacitance
400pF
Length
6.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
85W
Mount
Through Hole
Number of Channels
1
Package Quantity
3000
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
600mR
RoHS Compliant
Yes
Series
MDmesh™ II Plus
Turn-Off Delay Time
32.5ns
Turn-On Delay Time
8.8ns
Width
2.4mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STU10N60M2 Datasheet
Download the complete datasheet for Stmicroelectronics STU10N60M2 to view detailed technical specifications.
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