N-channel power MOSFET featuring 600V drain-source breakdown voltage and 7.5A continuous drain current. Offers 0.55 Ohm typical drain-source resistance at 560mR maximum. IPA K package with through-hole mounting, 85W max power dissipation, and operating temperatures from -55°C to 150°C. Includes fast switching characteristics with turn-on delay of 8.8ns and fall time of 13.2ns.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STU10N60M2 technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 7.5A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 560mR |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 13.2ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 6.2mm |
| Input Capacitance | 400pF |
| Length | 6.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 85W |
| Mount | Through Hole |
| Number of Channels | 1 |
| Package Quantity | 3000 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 600mR |
| RoHS Compliant | Yes |
| Series | MDmesh™ II Plus |
| Turn-Off Delay Time | 32.5ns |
| Turn-On Delay Time | 8.8ns |
| Width | 2.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STU10N60M2 Datasheet
Download the complete datasheet for Stmicroelectronics STU10N60M2 to view detailed technical specifications.
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