Stmicroelectronics
STU10NM65N
N-channel 650V - 0.43Y - 9A - TO-220/FP- IPAK - DPAKSecond generation MDmesh Power MOSFET
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
Power90W
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Technical Specifications
Stmicroelectronics STU10NM65N technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
9A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
480mR
Drain to Source Voltage (Vdss)
650V
Fall Time
20ns
Gate to Source Voltage (Vgs)
25V
Input Capacitance
850pF
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
90W
Mount
Through Hole
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
90W
Rds On Max
480mR
RoHS Compliant
Yes
Series
MDmesh™ II
Turn-Off Delay Time
50ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STU10NM65N Datasheet
Download the complete datasheet for Stmicroelectronics STU10NM65N to view detailed technical specifications.
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