P-channel Power MOSFET, -60V Vds, -10A continuous drain current, and 0.13 Ohm typical Rds(on). Features a TO-251-3 IPAK package for through-hole mounting, with a maximum power dissipation of 35W and an operating temperature range of -55°C to 175°C. Includes fast switching characteristics with a 3.7ns fall time, 64ns turn-on delay, and 14ns turn-off delay. This RoHS compliant component offers 340pF input capacitance and is available in a rail/tube package.
PackageTO-251-3
MountingThrough Hole
PolarityP-CHANNEL
Power35W
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Technical Specifications
Stmicroelectronics STU10P6F6 technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 10A |
| Drain to Source Breakdown Voltage | 60V |
| Drain to Source Resistance | 160mR |
| Drain to Source Voltage (Vdss) | 60V |
| Fall Time | 3.7ns |
| Gate to Source Voltage (Vgs) | 20V |
| Input Capacitance | 340pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 175°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 35W |
| Mount | Through Hole |
| Number of Elements | 1 |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | P-CHANNEL |
| Power Dissipation | 35W |
| Radiation Hardening | No |
| Rds On Max | 160mR |
| RoHS Compliant | Yes |
| Series | DeepGATE™, STripFET™ VI |
| Turn-Off Delay Time | 14ns |
| Turn-On Delay Time | 64ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STU10P6F6 Datasheet
Download the complete datasheet for Stmicroelectronics STU10P6F6 to view detailed technical specifications.
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