P-channel Power MOSFET, -60V Vds, -10A continuous drain current, and 0.13 Ohm typical Rds(on). Features a TO-251-3 IPAK package for through-hole mounting, with a maximum power dissipation of 35W and an operating temperature range of -55°C to 175°C. Includes fast switching characteristics with a 3.7ns fall time, 64ns turn-on delay, and 14ns turn-off delay. This RoHS compliant component offers 340pF input capacitance and is available in a rail/tube package.
PackageTO-251-3
MountingThrough Hole
PolarityP-CHANNEL
Power35W
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Technical Specifications
Stmicroelectronics STU10P6F6 technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
10A
Drain to Source Breakdown Voltage
60V
Drain to Source Resistance
160mR
Drain to Source Voltage (Vdss)
60V
Fall Time
3.7ns
Gate to Source Voltage (Vgs)
20V
Input Capacitance
340pF
Lead Free
Lead Free
Max Operating Temperature
175°C
Min Operating Temperature
-55°C
Max Power Dissipation
35W
Mount
Through Hole
Number of Elements
1
Package Quantity
75
Packaging
Rail/Tube
Polarity
P-CHANNEL
Power Dissipation
35W
Radiation Hardening
No
Rds On Max
160mR
RoHS Compliant
Yes
Series
DeepGATE™, STripFET™ VI
Turn-Off Delay Time
14ns
Turn-On Delay Time
64ns
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STU10P6F6 Datasheet
Download the complete datasheet for Stmicroelectronics STU10P6F6 to view detailed technical specifications.
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