N-channel power MOSFET featuring 650V drain-source breakdown voltage and 8.5A continuous drain current. This through-hole component offers a low 430mΩ drain-source on-resistance and a maximum power dissipation of 70W. Designed for demanding applications, it operates within a temperature range of -55°C to 150°C and is packaged in a TO-251 (IPAK-3) package. Key switching characteristics include a 15.6ns fall time and 22.6ns turn-on delay time.
PackageTO-251
MountingThrough Hole
PolarityN-CHANNEL
Power70W
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Technical Specifications
Stmicroelectronics STU12N65M5 technical specifications.
General
Package/Case
TO-251
Continuous Drain Current (ID)
8.5A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
430mR
Drain to Source Voltage (Vdss)
650V
Drain-source On Resistance-Max
430MR
Fall Time
15.6ns
Gate to Source Voltage (Vgs)
25V
Height
2.4mm
Input Capacitance
900pF
Lead Free
Lead Free
Length
6.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
70W
Mount
Through Hole
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
70W
Radiation Hardening
No
Rds On Max
430mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™ V
Threshold Voltage
4V
Turn-Off Delay Time
15.6ns
Turn-On Delay Time
22.6ns
Width
6.2mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STU12N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STU12N65M5 to view detailed technical specifications.
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