N-channel Power MOSFET, TO-251 package, featuring 650V drain-source breakdown voltage and 12A continuous drain current. Offers 299mΩ maximum drain-source on-resistance and 90W maximum power dissipation. Operates across a wide temperature range from -55°C to 150°C. Includes fast switching characteristics with 7ns fall time, 25ns turn-on delay, and 30ns turn-off delay. RoHS compliant with through-hole mounting.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
Power90W
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Technical Specifications
Stmicroelectronics STU16N65M5 technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
12A
Drain to Source Breakdown Voltage
650V
Drain to Source Resistance
299mR
Drain to Source Voltage (Vdss)
650V
Fall Time
7ns
Gate to Source Voltage (Vgs)
25V
Height
6.2mm
Input Capacitance
1.25nF
Length
6.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
90W
Mount
Through Hole
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
90W
Radiation Hardening
No
Rds On Max
299mR
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
MDmesh™ V
Threshold Voltage
4V
Turn-Off Delay Time
30ns
Turn-On Delay Time
25ns
Width
2.4mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STU16N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STU16N65M5 to view detailed technical specifications.
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