N-channel Power MOSFET, TO-251 package, featuring 650V drain-source breakdown voltage and 12A continuous drain current. Offers 299mΩ maximum drain-source on-resistance and 90W maximum power dissipation. Operates across a wide temperature range from -55°C to 150°C. Includes fast switching characteristics with 7ns fall time, 25ns turn-on delay, and 30ns turn-off delay. RoHS compliant with through-hole mounting.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
Power90W
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Technical Specifications
Stmicroelectronics STU16N65M5 technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 12A |
| Drain to Source Breakdown Voltage | 650V |
| Drain to Source Resistance | 299mR |
| Drain to Source Voltage (Vdss) | 650V |
| Fall Time | 7ns |
| Gate to Source Voltage (Vgs) | 25V |
| Height | 6.2mm |
| Input Capacitance | 1.25nF |
| Length | 6.6mm |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 90W |
| Mount | Through Hole |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Power Dissipation | 90W |
| Radiation Hardening | No |
| Rds On Max | 299mR |
| Reach SVHC Compliant | No |
| RoHS Compliant | Yes |
| Series | MDmesh™ V |
| Threshold Voltage | 4V |
| Turn-Off Delay Time | 30ns |
| Turn-On Delay Time | 25ns |
| Width | 2.4mm |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STU16N65M5 Datasheet
Download the complete datasheet for Stmicroelectronics STU16N65M5 to view detailed technical specifications.
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