N-channel Power MOSFET featuring 600V drain-source breakdown voltage and 1.2A continuous drain current. This SuperMESH3™ device offers a typical Rds(on) of 6.4 Ohms and a maximum of 8 Ohms. It operates within a temperature range of -55°C to 150°C and has a maximum power dissipation of 27W. The IPAK package (TO-251-3) facilitates through-hole mounting. Key switching characteristics include a 7ns turn-on delay, 23ns turn-off delay, and 31ns fall time.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STU1HN60K3 technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
1.2A
Drain to Source Breakdown Voltage
600V
Drain to Source Resistance
6.7R
Drain to Source Voltage (Vdss)
600V
Fall Time
31ns
Gate to Source Voltage (Vgs)
30V
Height
6.2mm
Input Capacitance
140pF
Length
6.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
27W
Mount
Through Hole
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
Radiation Hardening
No
Rds On Max
8R
RoHS Compliant
Yes
Series
SuperMESH3™
Turn-Off Delay Time
23ns
Turn-On Delay Time
7ns
Width
2.4mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STU1HN60K3 Datasheet
Download the complete datasheet for Stmicroelectronics STU1HN60K3 to view detailed technical specifications.
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