Stmicroelectronics
STU2LN60K3
N-channel 600 V, 4 Ohm typ., 2 A, SuperMESH3(TM) Power MOSFET in IPAK package
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
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Technical Specifications
Stmicroelectronics STU2LN60K3 technical specifications.
General
| Package/Case | TO-251-3 |
| Continuous Drain Current (ID) | 2A |
| Drain to Source Breakdown Voltage | 600V |
| Drain to Source Resistance | 4R |
| Drain to Source Voltage (Vdss) | 600V |
| Fall Time | 21ns |
| Gate to Source Voltage (Vgs) | 30V |
| Input Capacitance | 235pF |
| Lead Free | Lead Free |
| Max Operating Temperature | 150°C |
| Min Operating Temperature | -55°C |
| Max Power Dissipation | 45W |
| Mount | Through Hole |
| Package Quantity | 75 |
| Packaging | Rail/Tube |
| Polarity | N-CHANNEL |
| Radiation Hardening | No |
| Rds On Max | 4.5R |
| RoHS Compliant | Yes |
| Series | SuperMESH3™ |
| Turn-Off Delay Time | 23.5ns |
| Turn-On Delay Time | 10ns |
Compliance
| RoHS | Compliant |
Datasheet
Stmicroelectronics STU2LN60K3 Datasheet
Download the complete datasheet for Stmicroelectronics STU2LN60K3 to view detailed technical specifications.
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