N-channel SuperMESH3™ Power MOSFET in TO-251-3 package. Features 620V drain-source breakdown voltage, 2.5A continuous drain current, and 3 Ohm maximum drain-source on-resistance. Offers fast switching with 9ns turn-on delay and 27ns fall time. Operates from -55°C to 150°C with 45W maximum power dissipation. RoHS compliant and lead-free.
PackageTO-251-3
MountingThrough Hole
PolarityN-CHANNEL
Power45W
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Technical Specifications
Stmicroelectronics STU3LN62K3 technical specifications.
General
Package/Case
TO-251-3
Continuous Drain Current (ID)
2.5A
Drain to Source Breakdown Voltage
620V
Drain to Source Resistance
3R
Drain to Source Voltage (Vdss)
620V
Drain-source On Resistance-Max
3R
Fall Time
27ns
Gate to Source Voltage (Vgs)
30V
Height
6.9mm
Input Capacitance
386pF
Lead Free
Lead Free
Length
6.6mm
Max Operating Temperature
150°C
Min Operating Temperature
-55°C
Max Power Dissipation
45W
Mount
Through Hole
Package Quantity
75
Packaging
Rail/Tube
Polarity
N-CHANNEL
Power Dissipation
45W
Radiation Hardening
No
Rds On Max
3R
Reach SVHC Compliant
No
RoHS Compliant
Yes
Series
SuperMESH3™
Threshold Voltage
3.75V
Turn-Off Delay Time
30ns
Turn-On Delay Time
9ns
Width
2.4mm
Compliance
RoHS
Compliant
Datasheet
Stmicroelectronics STU3LN62K3 Datasheet
Download the complete datasheet for Stmicroelectronics STU3LN62K3 to view detailed technical specifications.
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